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DSS5540X
40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
Features
* * * * * Ultra Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications "Lead Free", RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2)
Mechanical Data
* * * * * Case: SOT89 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish -- Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.055 grams (approximate)
C
SOT89
E
B
C
E
C B
Top View
Device Schematic
Pin-Out Top
Ordering Information (Note 3)
Product DSS5540X-13
Notes:
Marking ZPS54
Reel size (inches) 13
Tape width (mm) 12mm
Quantity per reel 2,500
1. No purposefully added lead. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com 3. For packaging details, please go to our website at http://www.diodes.com
Marking Information
YWW ZPS54
ZPS54 = Product Type Marking Code = Manufacturer's Code Marking YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code (01 - 53)
DSS5540X
Document number: DS31653 Rev. 2 - 2
1 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated
DSS5540X Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Repetitive Peak Pulse Collector Current (Note 4) Continuous Collector Current Peak Pulse Base Current Continuous Base Current Symbol VCBO VCEO VEBO ICM ICRP IC IBM IB Value -40 -40 -6 -10 -5 -4 -2 -1 Unit V V V A A A A A
Thermal Characteristics
Characteristic Power Dissipation (Note 5) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = 25C Power Dissipation (Note 6) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 6) @ TA = 25C Operating and Storage Temperature Range
Notes: 4. Pulse width 10ms; Duty cycle 0.2 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on FR-4 PCB with 1inch2 copper pad layout.
Symbol PD RJA PD RJA TJ, TSTG
Value 0.9 139 2 62.5 -55 to +150
Unit W C/W W C/W C
2.4 2.0
PD, POWER DISSIPATION (W)
1.6
1.2
Note 6
0.8
Note 5
0.4 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.9 D = 0.05 RJA (t) = r(t) * R JA RJA = 135C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
D = Single Pulse
0.001 0.00001 0.0001
0.001
0.01
0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 2 Transient Thermal Response
100
1,000
10,000
DSS5540X
Document number: DS31653 Rev. 2 - 2
2 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated
DSS5540X
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Min -40 -40 -6 250 200 150 50 60 Typ 350 -70 -165 -150 -30 63 15 48 280 232 48 Max -100 -50 -100 -120 -170 -160 -340 -375 -75 -1.1 -1.2 -1.0 105 Unit V V V nA A nA Test Conditions IC = -100A IC = -10mA IE = -100A VCB = -30V, IE = 0 VCB = -30V, IE = 0, TA = 150C VEB = -5V, IC = 0 VCE = -2V, IC = -0.5A VCE = -2V, IC = -1A VCE = -2V, IC = -2A VCE = -2V, IC = -5A IC = -0.5A, IB = -5mA IC = -1A, IB = -10mA IC = -2A, IB = -200mA IC = -4A, IB = -200mA IC = -5A, IB = -500mA IC = -5A, IB = -500mA IC = -4A, IB = -200mA IC = -5A, IB = -500mA VCE = -2V, IC = -2A VCE = -10V, IC = -0.1A, f = 100MHz VCB = -10V, IE = 0A, f = 1MHz
DC Current Gain (Note 6)
Collector-Emitter Saturation Voltage (Note 7)
VCE(sat)
mV
Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Transition Frequency Collector Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes:
RCE(sat) VBE(sat) VBE(on) fT Cc ton td tr toff ts tf
m V V MHz pF ns ns ns ns ns ns
VCC = -10V, IC = -2A, IB1 = -IB2 = -200mA
7. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
2.2 2.0 IC, COLLECTOR CURRENT (A) 1.8
IB = -5mA
1,000
VCE = -1V
800 hFE, DC CURRENT GAIN
TA = 150C T A = 125C TA = 85C
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0
IB = -4mA
600
IB = -3mA
400
TA = 25C
IB = -2mA
200
IB = -1mA
T A = -55C
1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage
0 0.001
0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical DC Current Gain vs. Collector Current
DSS5540X
Document number: DS31653 Rev. 2 - 2
3 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated
DSS5540X
1
IC/IB = 10
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
VCE = -2V
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.8
0.1
0.6
T A = -55C
T A = 150C
0.01
TA = 125C T A = 85C T A = -55C T A = 25C
0.4
TA = 25C
TA = 85C
0.2
T A = 150C
TA = 125C
0.001 0.0001
0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current
0 0.0001
0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1,000
f = 1MHz
1.0
IC/IB = 10
0.8
T A = -55C
CAPACITANCE (pF)
Cibo
0.6
T A = 25C
100
Cobo
0.4
TA = 150C
TA = 85C T A = 125C
0.2
0 0.0001
0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current
10 0.1
1 10 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics
100
Package Outline Dimensions
D1
R0 .2 00
C
E
H
B B1 e1
8 (4 X )
L e
A
SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm
D
DSS5540X
Document number: DS31653 Rev. 2 - 2
4 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated
DSS5540X
Suggested Pad Layout
X1
X2 (2x) Y1 Y3 Y Y2 C X (3x) Y4
Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. 2. B. are intended to implant into the body, or support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DSS5540X
Document number: DS31653 Rev. 2 - 2
5 of 5 www.diodes.com
October 2010
(c) Diodes Incorporated

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